Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures. - Daniel Hofstetter; Esther Baumann; Fabrizio Raphael Giorgetta; Ricardo Théron; Hong Wu; William J. Schaff; Jahan Dawlaty; Paul A. George; Lester F. Eastman; Farhan Rana; Prem K. Kandaswamy; Fabien Guillot; et al. (Proc. IEEE, 2010)

ZnO Devices and Applications: A Review of Current Status and Future Prospects. - Ümit Özgür; Daniel Hofstetter; Hadis Morkoç (Proc. IEEE, 2010)