The effects of radiation on the terrestrial operation of SiC MOSFETs. - Akin Akturk; James McGarrity; Neil Goldsman; Daniel J. Lichtenwalner; Brett Hull; Dave Grider; Richard Wilkins (IRPS, 2018)

Reliability studies of SiC vertical power MOSFETs. - Daniel J. Lichtenwalner; Brett Hull; Edward Van Brunt; Shadi Sabri; Donald A. Gajewski; Dave Grider; Scott Allen; John W. Palmour; Akin Akturk; James McGarrity (IRPS, 2018)

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. - James P. Ashton; Patrick M. Lenahan; Daniel J. Lichtenwalner; Aivars J. Lelis; Mark A. Anders 002 (IRPS, 2019)

Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. - James P. Ashton; Patrick M. Lenahan; Daniel J. Lichtenwalner; Aivars J. Lelis (IRPS, 2020)

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. - Satyaki Ganguly; Daniel J. Lichtenwalner; Caleb Isaacson; Donald A. Gajewski; Philipp Steinmann; Ryan Foarde; Brett Hull; Sei-Hyung Ryu; Scott Allen; John W. Palmour (IRPS, 2022)

Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode. - Arman Ur Rashid; Britt Brooks; Steven Manz; Daniel J. Lichtenwalner; Sei-Hyung Ryu (BCICTS, 2023)

Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. - Edward Van Brunt; Daniel J. Lichtenwalner; J. H. Park; Satyaki Ganguly; J. W. McPherson (IRPS, 2023)

High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes. - In-Hwan Ji; Anoop Mathew; Jae-Hyung Park; Neal Oldham; Matthew McCain; Shadi Sabri; Edward Van Brunt; Brett Hull; Daniel J. Lichtenwalner; Donald A. Gajewski; John W. Palmour (IRPS, 2023)

Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. - Ayan K. Biswas; Daniel J. Lichtenwalner; Jae-Hyung Park; Brett Hull; Satyaki Ganguly; Donald A. Gajewski; Elif Balkas (IRPS, 2024)

Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress. - S. R. Stein; J. Kim; Suman Das; Daniel J. Lichtenwalner; Sei-Hyung Ryu (IRPS, 2024)

Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method. - Philipp Steinmann; Daniel J. Lichtenwalner; Shane Stein; Jae-Hyung Park; Suman Das; Sei-Hyung Ryu (IRPS, 2024)

Demonstration of the Benefits of Measuring SiC MOSFET BTI using a Triple Sense Method. - Daniel J. Lichtenwalner (IRPS, 2025)