Phase-change random access memory: A scalable technology. - Simone Raoux; Geoffrey W. Burr; Matthew J. Breitwisch; Charles T. Rettner; Yi-Chou Chen; Robert M. Shelby; Martin Salinga; Daniel Krebs; Shih-Hung Chen; Hsiang-Lan Lung; Chung Hon Lam (IBM J. Res. Dev., 2008)

A collective relaxation model for resistance drift in phase change memory cells. - Abu Sebastian; Daniel Krebs; Manuel Le Gallo; Haralampos Pozidis; Evangelos Eleftheriou (IRPS, 2015)