Effects of hydrogen transport and reactions on microelectronics radiation response and reliability. - Daniel M. Fleetwood (Microelectron. Reliab., 2002)

Hydrogen-related reliability issues for advanced microelectronics. - Daniel M. Fleetwood (Microelectron. Reliab., 2002)

Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics. - J. A. Felix; J. R. Schwank; Daniel M. Fleetwood; M. R. Shaneyfelt; Evgeni P. Gusev (Microelectron. Reliab., 2004)

Effects of device aging on microelectronics radiation response and reliability. - Daniel M. Fleetwood; M. P. Rodgers; L. Tsetseris; X. J. Zhou; I. Batyrev; S. Wang; Ronald D. Schrimpf; Sokrates T. Pantelides (Microelectron. Reliab., 2007)

Hydrogen in MOSFETs - A primary agent of reliability issues. - Sokrates T. Pantelides; L. Tsetseris; Sergey N. Rashkeev; X. J. Zhou; Daniel M. Fleetwood; Ronald D. Schrimpf (Microelectron. Reliab., 2007)

Total ionizing dose effects in shallow trench isolation oxides. - Federico Faccio; Hugh J. Barnaby; Xiao J. Chen; Daniel M. Fleetwood; Laura Gonella; Michael L. McLain; Ronald D. Schrimpf (Microelectron. Reliab., 2008)

Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. - Sokrates T. Pantelides; L. Tsetseris; M. J. Beck; Sergey N. Rashkeev; G. Hadjisavvas; I. G. Batyrev; B. R. Tuttle; A. G. Marinopoulos; X. J. Zhou; Daniel M. Fleetwood; Ronald D. Schrimpf (ESSCIRC, 2009)

High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. - R. Arinero; En-xia Zhang; Nadia Rezzak; Ronald D. Schrimpf; Daniel M. Fleetwood; B. K. Choï; A. B. Hmelo; Julien Mekki; Antoine D. Touboul; Frédéric Saigné (Microelectron. Reliab., 2011)

1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. - Tania Roy; Yevgeniy S. Puzyrev; En-xia Zhang; Sandeepan DasGupta; Sarah A. Francis; Daniel M. Fleetwood; Ronald D. Schrimpf; Umesh K. Mishra; Jim S. Speck; Sokrates T. Pantelides (Microelectron. Reliab., 2011)

The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. - Nadia Rezzak; Pierre Maillard; Ronald D. Schrimpf; Michael L. Alles; Daniel M. Fleetwood; Yanfeng Albert Li (Microelectron. Reliab., 2012)

Total-ionizing-dose effects and reliability of carbon nanotube FET devices. - Cher Xuan Zhang; En-xia Zhang; Daniel M. Fleetwood; Michael L. Alles; Ronald D. Schrimpf; Chris Rutherglen; Kosmas Galatsis (Microelectron. Reliab., 2014)

Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. - A. Sasikumar; Z. Zhang; P. Kumar; En-xia Zhang; Daniel M. Fleetwood; Ronald D. Schrimpf; Paul Saunier; Cathy Lee; S. A. Ringel; Aaron R. Arehart (IRPS, 2015)

Border traps and bias-temperature instabilities in MOS devices. - Daniel M. Fleetwood (Microelectron. Reliab., 2018)

The effect of ionization and displacement damage on minority carrier lifetime. - Jianqun Yang; Xingji Li; Chaoming Liu; Daniel M. Fleetwood (Microelectron. Reliab., 2018)

Reliability Limiting Defects in MOS Gate Oxides: Mechanisms and Modeling Implications. - Daniel M. Fleetwood (IRPS, 2019)

Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. - Peng Wang; En-xia Zhang; Daniel M. Fleetwood; Peng Fei Wang; Michael W. McCurdy; Ji-Tzouh Lin; Michael L. Alles; Jim L. Davidson; Bruce W. Alphenaar; Ronald D. Schrimpf (ASICON, 2021)

Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes. - Daniel M. Fleetwood (DRC, 2023)

Single-Event Burnout by Cf-252 Irradiation in Vertical $ beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate. - Sajal Islam; Aditha S. Senarath; Arijit Sengupta; En-xia Zhang; Dennis R. Ball; Daniel M. Fleetwood; Ronald D. Schrimpf; Esmat Farzana; Arkka Bhattacharyya; Nolan S. Hendricks; James S. Speck (DRC, 2023)

The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs. - Delgermaa Nergui; Mozhgan Hosseinzadeh; Y. A. Mensah; Harrison P. Lee; D. G. Sam; K. Li; E. X. Zhang; Daniel M. Fleetwood; John D. Cressler (IRPS, 2024)

Charge Trapping in Irradiated 3D Devices and ICs (Invited). - En-xia Zhang; Shintaro Toguchi; Zi Xiang Guo; Michael L. Alles; Ronald D. Schrimpf; Daniel M. Fleetwood (IRPS, 2024)