High injection effects on noise characteristics of Si BJTs and SiGe HBTs. - M. J. Martín-Martínez; Susana Pérez; Daniel Pardo 004; Tomás González (Microelectron. Reliab., 2001)

Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs. - Javier Mateos; Tomás González; Daniel Pardo 004; Virginie Hoel; Alain Cappy (Microelectron. Reliab., 2001)

Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices. - Pavel Shiktorov; Evjeni Starikov; Viktor Gruzinskis; Tomás González; Javier Mateos; Daniel Pardo 004; Luca Reggiani; Luca Varani; Jean Claude Vaissière (VLSI Design, 2001)