Scaling of InAlN/GaN power transistors. - Daniel Piedra; Hyung-Seok Lee; Tomás Palacios; Xiang Gao; Shiping Guo (ESSDERC, 2012)

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. - M. P. King; Jeramy Ray Dickerson; S. DasGupta; Matthew J. Marinella; R. J. Kaplar; Daniel Piedra; Min Sun; Tomás Palacios (IRPS, 2015)

Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter. - Eyal Aklimi; Daniel Piedra; Kevin Tien; Tomás Palacios; Kenneth L. Shepard (IEEE J. Solid State Circuits, 2017)

Design-space and scalable technology for GaN based power transistors. - Daniel Piedra (2018)