Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling. - Federico Alimenti; Guendalina Simoncini; Gianluca Brozzetti; Daniele Dal Maistro; Marc Tiebout (IEEE Access, 2020)

A K-band Gilbert-Cell Frequency Doubler with Self-Adjusted 25% LO Duty-Cycle in SiGe BiCMOS Technology. - Lorenzo Piotto; Guglielmo De Filippi; Daniele Dal Maistro; Simone Erba; Andrea Mazzanti (ESSCIRC, 2022)

CAD Modeling of mm-Wave Circuits Incorporating Avalanche Noise Diodes. - Guendalina Simoncini; Daniele Dal Maistro; Federico Alimenti (IEEE Access, 2022)

A 5.6 dB NF Two-Stage 110 - 125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS. - Victor Lasserre; Sarah Koop-Brinkmann; Michele Caruso; Daniele Dal Maistro; Giovanni Volpato; Quang Huy Le; Thomas Kämpfe; Christian Ziegler; Finn Stapelfeldt; Vadim Issakov (BCICTS, 2024)

A 14-32 GHz SiGe-BiCMOS Gilbert-Cell Frequency Doubler With Self-Adjusted Reduced Duty-Cycle Performance Enhancement. - Lorenzo Piotto; Guglielmo De Filippi; Gianluca Brozzetti; Daniele Dal Maistro; Simone Erba; Andrea Mazzanti (IEEE J. Solid State Circuits, 2024)