Dual-band 1.7 GHz / 2.5 GHz class-E power amplifier in 130 nm CMOS technology. - Danish Kalim; Adel Fatemi; Renato Negra (NEWCAS, 2012)

A 3.3 GHz class-E power amplifier with 77% PAE utilising GaN HEMT technology. - Sergej Werner; Danish Kalim; Renato Negra (NEWCAS, 2012)