Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM. - Yen-Huei Chen; Shao-Yu Chou; Quincy Li; Wei-Min Chan; Dar Sun; Hung-Jen Liao; Ping Wang; Meng-Fan Chang; Hiroyuki Yamauchi (IEEE J. Solid State Circuits, 2012)

17.2 A 64kb 16nm asynchronous disturb current free 2-port SRAM with PMOS pass-gates for FinFET technologies. - Hidehiro Fujiwara; Li-Wen Wang; Yen-Huei Chen; Kao-Cheng Lin; Dar Sun; Shin-Rung Wu; Jhon-Jhy Liaw; Chih-Yung Lin; Mu-Chi Chiang; Hung-Jen Liao; Shien-Yang Wu; Jonathan Chang (ISSCC, 2015)

A 64-Kb 0.37V 28nm 10T-SRAM with mixed-Vth read-port and boosted WL scheme for IoT applications. - Hidehiro Fujiwara; Yen-Huei Chen; Chih-Yu Lin; Wei-Cheng Wu; Dar Sun; Shin-Rung Wu; Hung-Jen Liao; Jonathan Chang (A-SSCC, 2016)

15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications. - Qing Dong 001; Mahmut E. Sinangil; Burak Erbagci; Dar Sun; Win-San Khwa; Hung-Jen Liao; Yih Wang; Jonathan Chang (ISSCC, 2020)

An 89TOPS/W and 16.3TOPS/mm2 All-Digital SRAM-Based Full-Precision Compute-In Memory Macro in 22nm for Machine-Learning Edge Applications. - Yu-Der Chih; Po-Hao Lee; Hidehiro Fujiwara; Yi-Chun Shih; Chia-Fu Lee; Rawan Naous; Yu-Lin Chen; Chieh-Pu Lo; Cheng-Han Lu; Haruki Mori; Wei-Cheng Zhao; Dar Sun; et al. (ISSCC, 2021)

A 7-nm Compute-in-Memory SRAM Macro Supporting Multi-Bit Input, Weight and Output and Achieving 351 TOPS/W and 372.4 GOPS. - Mahmut E. Sinangil; Burak Erbagci; Rawan Naous; Kerem Akarvardar; Dar Sun; Win-San Khwa; Hung-Jen Liao; Yih Wang; Jonathan Chang (IEEE J. Solid State Circuits, 2021)

A 5-nm 254-TOPS/W 221-TOPS/mm2 Fully-Digital Computing-in-Memory Macro Supporting Wide-Range Dynamic-Voltage-Frequency Scaling and Simultaneous MAC and Write Operations. - Hidehiro Fujiwara; Haruki Mori; Wei-Chang Zhao; Mei-Chen Chuang; Rawan Naous; Chao-Kai Chuang; Takeshi Hashizume; Dar Sun; Chia-Fu Lee; Kerem Akarvardar; Saman Adham; Tan-Li Chou; et al. (ISSCC, 2022)