Development of a permittivity extraction method for ultra low k dielectrics integrated in advanced interconnects. - Olga Cueto; Myriam Assous; François de Crecy; A. Toffoli; David Bouchu; M. Fayolle; Frédéric Boulanger (Microelectron. Reliab., 2007)

An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling. - Léa Di Cioccio; Pierric Gueguen; Rachid Taibi; Thomas Signamarcheix; Laurent Bally; Laurent Vandroux; Marc Zussy; Sophie Verrun; Jérôme Dechamp; Patrick Leduc; Myriam Assous; David Bouchu; et al. (3DIC, 2009)

First integration of Cu TSV using die-to-wafer direct bonding and planarization. - Patrick Leduc; Myriam Assous; Léa Di Cioccio; Marc Zussy; Thomas Signamarcheix; Antonio Roman; Maxime Rousseau; Sophie Verrun; Laurent Bally; David Bouchu; Lionel Cadix; Alexis Farcy; et al. (3DIC, 2009)

A successful implementation of dual damascene architecture to copper TSV for 3D high density applications. - Rebha El Farhane; Myriam Assous; Patrick Leduc; Aurélie Thuaire; David Bouchu; Hélène Feldis; Nicolas Sillon (3DIC, 2010)

Electromigration-induced failure in operando characterization of 3D interconnects: microstructure influence. - Simon Gousseau; Stéphane Moreau; David Bouchu; Alexis Farcy; Pierre Montmitonnet; Karim Inal; François Bay; Marc Zelsmann; Emmanuel Picard; Mathieu Salaün (Microelectron. Reliab., 2015)

Recent Advances on Electromigration in Cu/SiO2 to Cu/SiO2 Hybrid Bonds for 3D Integrated Circuits. - Stéphane Moreau; David Bouchu; J. Jourdon; Bassel Ayoub; S. Lhostis; Hélène Frémont; P. Lamontagne (IRPS, 2023)