Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies. - David L. Harame; Kim M. Newton; Raminderpal Singh; Susan L. Sweeney; Sue E. Strang; Jeffrey B. Johnson; Scott M. Parker; Carl E. Dickey; Mete Erturk; Greg J. Schulberg; Donald L. Jordan; David C. Sheridan; et al. (IBM J. Res. Dev., 2003)

Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications. - Jeffrey B. Johnson; Alvin J. Joseph; David C. Sheridan; Ramana M. Maladi; Per-Olof Brandt; Jonas Persson; Jesper Andersson; Are Bjorneklett; Ulrika Persson; Fariborz Abasi; Lars Tilly (IEEE J. Solid State Circuits, 2004)

A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field. - Elisa Platania; Zhiyang Chen; Filippo Chimento; Liqing Lu; Enrico Santi; Angelo Raciti; Jerry L. Hudgins; H. Alan Mantooth; David C. Sheridan; J. Cassady (IAS, 2008)