Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors. - Lakshmi S. Vempati; John D. Cressler; Jeffrey Babcock; Richard C. Jaeger; David L. Harame (IEEE J. Solid State Circuits, 1996)

Integrated RF components in a SiGe bipolar technology. - Joachim N. Burghartz; Mehmet Soyuer; Keith A. Jenkins; Michael Kies; Margaret Dolan; Kenneth J. Stein; John Malinowski; David L. Harame (IEEE J. Solid State Circuits, 1997)

Temperature dependence of Q and inductance in spiral inductors fabricated in a silicon-germanium/BiCMOS technology. - Robert A. Groves; David L. Harame; Dale Jadus (IEEE J. Solid State Circuits, 1997)

An 11 GHz 3-V SiGe voltage controlled oscillator with integrated resonator. - Mehmet Soyuer; Joachim N. Burghartz; Herschel A. Ainspan; Keith A. Jenkins; Peter Xiao; Arvin R. Shahani; Margaret S. Dolan; David L. Harame (IEEE J. Solid State Circuits, 1997)

A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design. - Sorin P. Voinigescu; Michael C. Maliepaard; Jonathan L. Showell; Greg E. Babcock; David Marchesan; Michael Schröter; Peter Schvan; David L. Harame (IEEE J. Solid State Circuits, 1997)

A scaleable, statistical SPICE Gummel-Poon model for SiGe HBTs. - K. M. Walter; B. Ebersman; D. A. Sunderland; G. D. Berg; Greg G. Freeman; Robert A. Groves; D. K. Jadus; David L. Harame (IEEE J. Solid State Circuits, 1998)

Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs. - Seshadri Subbanna; Lawrence Larson; Greg G. Freeman; David Ahlgren; Kenneth J. Stein; Carl E. Dickey; James Mecke; A. Rincon; P. Bacon; Robert A. Groves; Mehmet Soyuer; David L. Harame; et al. (CICC, 2001)

Transistor noise in SiGe HBT RF technology. - Guofu Niu; Zhenrong Jin; John D. Cressler; Rao Rapeta; Alvin J. Joseph; David L. Harame (IEEE J. Solid State Circuits, 2001)

On-chip interconnect-aware design and modeling methodology, based on high bandwidth transmission line devices. - David Goren; Michael Zelikson; Rachel Gordin; Israel A. Wagner; Anastasia Barger; Alon Amir; Betty Livshitz; Anatoly Sherman; Youri Tretiakov; Robert A. Groves; J. Park; Donald L. Jordan; et al. (DAC, 2003)

Mixed signals on mixed-signal: the right next technology. - Rob A. Rutenbar; David L. Harame; Kurt Johnson; Paul Kempf; Teresa H. Meng; Reza Rofougaran; James Spoto (DAC, 2003)

Foundation of rf CMOS and SiGe BiCMOS technologies. - James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg G. Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Youssef Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St. Onge; et al. (IBM J. Res. Dev., 2003)

Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies. - David L. Harame; Kim M. Newton; Raminderpal Singh; Susan L. Sweeney; Sue E. Strang; Jeffrey B. Johnson; Scott M. Parker; Carl E. Dickey; Mete Erturk; Greg J. Schulberg; Donald L. Jordan; David C. Sheridan; et al. (IBM J. Res. Dev., 2003)

Product applications and technology directions with SiGe BiCMOS. - Alvin J. Joseph; James S. Dunn; Greg G. Freeman; David L. Harame; Douglas Coolbaugh; Robert A. Groves; Kenneth J. Stein; Rich Volant; Seshadri Subbanna; V. S. Marangos; Stephen St. Onge; Ebenezer Eshun; et al. (IEEE J. Solid State Circuits, 2003)

A 21-27GHz self-shielded 4-way power-combining PA balun. - Tak Shun Dickson Cheung; John R. Long; Youri Tretiakov; David L. Harame (CICC, 2004)

Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS Technology. - Yiming Chen; Xiaojuen Yuan; David Scagnelli; James Mecke; Jeff Gross; David L. Harame (DATE, 2004)

Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS. - Alvin J. Joseph; David L. Harame; Basanth Jagannathan; Douglas D. Coolbaugh; David C. Ahlgren; John Magerlein; Louis D. Lanzerotti; Natalie B. Feilchenfeld; Stephen A. St. Onge; James S. Dunn; Edward J. Nowak (Proc. IEEE, 2005)

Special Issue on Silicon Germanium - Advanced Technology, Modeling, and Design. - Raminderpal Singh; David L. Harame; Bernard S. Meyerson (Proc. IEEE, 2005)

SiGe BiCMOS Trends - Today and Tomorrow. - James S. Dunn; David L. Harame; Alvin J. Joseph; Stephen A. St. Onge; Natalie B. Feilchenfeld; Louis D. Lanzerotti; Bradley A. Orner; Ephrem G. Gebreselasie; Jeffrey B. Johnson; Douglas D. Coolbaugh; Rick Rassel; Marwan Khater (CICC, 2006)

A 10Gb/s 6Vpp differential modulator driver in 0.18µm SiGe-BiCMOS. - Yi Zhao 003; Leonardo Vera; John R. Long; David L. Harame (ISSCC, 2013)

Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends. - James Hoffman; Jean-Roland Martin-Gosse; Stefan Shopov; Jack J. Pekarik; Renata Camillo-Castillo; Vibhor Jain; David L. Harame; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2016)

RF FDSOI Technology and modelling. - David L. Harame (ESSDERC, 2018)

Evolution and Optimization of BEOL MOM Capacitors Across Advanced CMOS Nodes. - Jinglin Shi; A. Sidelnicov; Kok Wai J. Chew; Mei See Chin; C. Schippel; J. M. M. dos Santos; Frank Schlaphof; Lutz Meinshausen; John R. Long; David L. Harame (ESSDERC, 2018)