A 400mV active VMIN, 200mV retention VMIN, 2.8 GHz 64Kb SRAM with a 0.09 um2 6T bitcell in a 16nm FinFET CMOS process. - Azeez Bhavnagarwala; Imran Iqbal; An Nguyen; David Ondricek; Vikas Chandra; Robert C. Aitken (VLSI Circuits, 2016)