The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor. - David R. Greenberg (1995)

Foundation of rf CMOS and SiGe BiCMOS technologies. - James S. Dunn; David C. Ahlgren; Douglas D. Coolbaugh; Natalie B. Feilchenfeld; Greg G. Freeman; David R. Greenberg; Robert A. Groves; Fernando J. Guarín; Youssef Hammad; Alvin J. Joseph; Louis D. Lanzerotti; Stephen A. St. Onge; et al. (IBM J. Res. Dev., 2003)

RFCMOS technology from 0.25μm to 65nm: the state of the art. - John J. Pekarik; David R. Greenberg; Basanth Jagannathan; Robert A. Groves; J. R. Jones; Raminderpal Singh; Anil Chinthakindi; Xudong Wang; Matthew J. Breitwisch; Douglas D. Coolbaugh; Peter E. Cottrell; John E. Florkey; et al. (CICC, 2004)

Scaling of SiGe Heterojunction Bipolar Transistors. - Jae-Sung Rieh; David R. Greenberg; Andreas Stricker; Greg G. Freeman (Proc. IEEE, 2005)