Failures in ultrathin oxides: Stored energy or carrier energy driven? - S. Bruyère; Frederic Monsieur; David Roy 001; E. Vincent; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Body effect induced wear-out acceleration in ultra-thin oxides. - Sylvie Bruyère; David Roy 001; E. Robilliart; E. Vincent; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2001)

Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC). - Thierry Devoivre; M. Lunenborg; C. Julien; J.-P. Carrere; P. Ferreira; W. J. Toren; A. VandeGoor; P. Gayet; T. Berger; O. Hinsinger; P. Vannier; Y. Trouiller; et al. (MTDT, 2002)

Gate oxide Reliability assessment optimization. - Frederic Monsieur; E. Vincent; David Roy 001; S. Bruyère; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2002)

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. - David Roy 001; S. Bruyère; E. Vincent; Frederic Monsieur (Microelectron. Reliab., 2002)

On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. - Frederic Monsieur; E. Vincent; Vincent Huard; S. Bruyère; David Roy 001; Thomas Skotnicki; G. Pananakakis; Gérard Ghibaudo (Microelectron. Reliab., 2003)

New insights into the change of voltage acceleration and temperature activation of oxide breakdown. - G. Ribes; S. Bruyère; Frederic Monsieur; David Roy 001; Vincent Huard (Microelectron. Reliab., 2003)

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. - G. Ribes; S. Bruyère; Mickael Denais; Frederic Monsieur; Vincent Huard; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. - G. Ribes; S. Bruyère; Mickael Denais; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Designing in reliability in advanced CMOS technologies. - C. R. Parthasarathy; Mickael Denais; Vincent Huard; G. Ribes; David Roy 001; Chloe Guérin; F. Perrier; E. Vincent; Alain Bravaix (Microelectron. Reliab., 2006)

Will BiCMOS stay competitive for mmW applications ? - Patrice Garcia; Alain Chantre; Sébastien Pruvost; Pascal Chevalier 002; Sean T. Nicolson; David Roy 001; Sorin P. Voinigescu; Christophe Garnier (CICC, 2008)

Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. - Laurent Negre; David Roy 001; Florian Cacho; Patrick Scheer; Sebastien Jan; Samuel Boret; Daniel Gloria; Gérard Ghibaudo (IEEE J. Solid State Circuits, 2012)

Microscopic scale characterization and modeling of transistor degradation under HC stress. - Yoann Mamy Randriamihaja; Vincent Huard; Xavier Federspiel; Alban Zaka; Pierpaolo Palestri; Denis Rideau; David Roy 001; Alain Bravaix (Microelectron. Reliab., 2012)

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. - A. Bezza; M. Rafik; David Roy 001; X. Federspiel; P. Mora; Cheikh Diouf; Vincent Huard; Gérard Ghibaudo (IRPS, 2015)

Physically-based extraction methodology for accurate MOSFET degradation assessment. - Giulio Torrente; Jean Coignus; Sophie Renard; Alexandre Vernhet; Gilles Reimbold; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2015)

Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. - Giulio Torrente; Jean Coignus; Alexandre Vernhet; Jean-Luc Ogier; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2017)

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). - Antoine Laurent; Xavier Garros; Sylvain Barraud; J. Pelloux-Prayer; Mikaël Cassé; Fred Gaillard; X. Federspiel; David Roy 001; E. Vincent; Gérard Ghibaudo (IRPS, 2018)

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. - D. Nouguier; X. Federspiel; Gérard Ghibaudo; M. Rafik; David Roy 001 (Microelectron. Reliab., 2018)

Process Optimization for HCI Improvement in I/O Analog Devices. - Cheikh Diouf; N. Guitard; M. Rafik; J. J. Martinez; X. Federspiel; Alain Bravaix; D. Muller; David Roy 001 (IRPS, 2019)

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. - A. P. Nguyen; Xavier Garros; M. Rafik; Florian Cacho; David Roy 001; Xavier Federspiel; Fred Gaillard (IRPS, 2019)

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. - Mathieu Sicre; Megan Agnew; Christel Buj; Jean Coignus; Dominique Golanski; Rémi Helleboid; Bastien Mamdy; Isobel Nicholson; Sara Pellegrini; Denis Rideau; David Roy 001; Françis Calmon (ESSDERC, 2021)

BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. - Louis Gerrer; Jacques Cluzel; Fred Gaillard; Xavier Garros; Xavier Federspiel; Florian Cacho; David Roy 001; E. Vincent (IRPS, 2021)

Statistical measurements and Monte-Carlo simulations of DCR in SPADs. - Mathieu Sicre; Megan Agnew; Christel Buj; Caroline Coutier; Dominique Golanski; Rémi Helleboid; Bastien Mamdy; Isobel Nicholson; Sara Pellegrini; Denis Rideau; David Roy 001; Françis Calmon (ESSCIRC, 2022)

Hot-Carrier Degradation modeling of DCR drift in SPADs. - Mathieu Sicre; David Roy 001; Françis Calmon (ESSDERC, 2023)

Insight Into HCI Reliability on I/O Nitrided Devices. - C. Doyen; V. Yon; Xavier Garros; Luigi Basset; Tadeu Mota Frutuoso; C. Dagon; Cheikh Diouf; X. Federspiel; V. Millon; Frederic Monsieur; C. Pribat; David Roy 001 (IRPS, 2023)

Characterization and modeling of DCR and DCR drift variability in SPADs. - Mathieu Sicre; X. Federspiel; Bastien Mamdy; David Roy 001; Françis Calmon (IRPS, 2023)

A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. - A. Divay; Cédric Dehos; Ismael Charlet; Fred Gaillard; B. Duriez; Xavier Garros; J. Antonijevic; Joycelyn Hai; Nathalie Revil; Jeremie Forest; Vincent Knopik; Florian Cacho; et al. (IRPS, 2024)

Non-conducting Hot carrier temperature activation and temperature sense effect. - X. Federspiel; Cheikh Diouf; B. Arunachalam; David Roy 001; Florian Cacho (IRPS, 2024)