Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. - Géraldine Bertrand; Christelle Delage; Marise Bafleur; Nicolas Nolhier; Jean-Marie Dorkel; Quang Nguyen; Nicolas Mauran; David Trémouilles; Philippe Perdu (IEEE J. Solid State Circuits, 2001)

Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation. - Romain Desplats; Felix Beaudoin; Philippe Perdu; Patrick Poirier; David Trémouilles; Marise Bafleur; Dean Lewis (Microelectron. Reliab., 2001)

Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization. - Thomas Beauchêne; Dean Lewis; Felix Beaudoin; Vincent Pouget; Romain Desplats; Pascal Fouillat; Philippe Perdu; Marise Bafleur; David Trémouilles (Microelectron. Reliab., 2003)

Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS). - Thomas Beauchêne; David Trémouilles; Dean Lewis; Philippe Perdu; Pascal Fouillat (Microelectron. Reliab., 2003)

TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology. - David Trémouilles; Géraldine Bertrand; Marise Bafleur; Felix Beaudoin; Philippe Perdu; Nicolas Guitard; Lionel Lescouzères (Microelectron. Reliab., 2003)

Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency. - David Trémouilles; Marise Bafleur; Géraldine Bertrand; Nicolas Nolhier; Nicolas Mauran; Lionel Lescouzères (IEEE J. Solid State Circuits, 2004)

Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications. - Nicolas Guitard; David Trémouilles; Marise Bafleur; Laurent Escotte; Laurent Bary; Philippe Perdu; Gérard Sarrabayrouse; Nicolas Nolhier; Roberto Reyna-Rojas (Microelectron. Reliab., 2004)

RF ESD protection strategies - the design and performance trade-off challenges. - Philippe Jansen; Steven Thijs; Dimitri Linten; M. I. Natarajan; Vesselin K. Vassilev; Mingxu Liu; Ann Concannon; David Trémouilles; Takeshi Nakaie; Masanori Sawada; Vladislav A. Vashchenko; Marcel ter Beek; et al. (CICC, 2005)

Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. - Nicolas Guitard; Fabien Essely; David Trémouilles; Marise Bafleur; Nicolas Nolhier; Philippe Perdu; André Touboul; Vincent Pouget; Dean Lewis (Microelectron. Reliab., 2005)

Transient voltage overshoot in TLP testing - Real or artifact? - David Trémouilles; Steven Thijs; Philippe Roussel; M. I. Natarajan; Vesselin K. Vassilev; Guido Groeseneken (Microelectron. Reliab., 2007)

Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD). - Marianne Diatta; Emilien Bouyssou; David Trémouilles; P. Martinez; F. Roqueta; O. Ory; Marise Bafleur (Microelectron. Reliab., 2009)

A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. - Dimitri Linten; Steven Thijs; Jonathan Borremans; Morin Dehan; David Trémouilles; Mirko Scholz; M. I. Natarajan; Piet Wambacq; Stefaan Decoutere; Guido Groeseneken (Microelectron. Reliab., 2009)

Accelerated lifetime test of RF-MEMS switches under ESD stress. - Jinyu Jason Ruan; Nicolas Nolhier; George J. Papaioannou; David Trémouilles; Vincent Puyal; C. Villeneuve; T. Idda; Fabio Coccetti; Robert Plana (Microelectron. Reliab., 2009)

An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices. - Jinyu Jason Ruan; Nicolas Monnereau; David Trémouilles; Nicolas Mauran; Fabio Coccetti; Nicolas Nolhier; Robert Plana (IEEE Trans. Instrum. Meas., 2012)

Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. - Nicolas Monnereau; Fabrice Caignet; David Trémouilles; Nicolas Nolhier; Marise Bafleur (Microelectron. Reliab., 2013)

Analysis of an ESD failure mechanism on a SiC MESFET. - Tanguy Phulpin; David Trémouilles; Karine Isoird; Dominique Tournier; Philippe Godignon; Patrick Austin (Microelectron. Reliab., 2014)

Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology. - Houssam Arbess; Marise Bafleur; David Trémouilles; Moustafa Zerarka (Microelectron. Reliab., 2015)

Failure analysis of ESD-stressed SiC MESFET. - Tanguy Phulpin; David Trémouilles; Karine Isoird; Dominique Tournier; Philippe Godignon; Patrick Austin (Microelectron. Reliab., 2015)

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. - F. Boige; Frédéric Richardeau; David Trémouilles; Stéphane Lefebvre; G. Guibaud (Microelectron. Reliab., 2017)

New triggering-speed-characterization method for diode-triggered SCR using TLP. - Mouna Mahane; David Trémouilles; Marise Bafleur; Benjamin Thon; Marianne Diatta; Lionel Jaouen (Microelectron. Reliab., 2017)

A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. - D. Hachem; David Trémouilles; Frederic Morancho; Gaëtan Toulon (Microelectron. Reliab., 2018)