Field plate related reliability improvements in GaN-on-Si HEMTs. - Alessandro Chini; Fabio Soci; Fausto Fantini; Antonio Nanni; Alessio Pantellini; Claudio Lanzieri; Davide Bisi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2012)

Influence of fluorine-based dry etching on electrical parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors. - Davide Bisi; Matteo Meneghini; Antonio Stocco; Giulia Cibin; Alessio Pantellini; Antonio Nanni; Claudio Lanzieri; Enrico Zanoni; Gaudenzio Meneghesso (ESSDERC, 2013)

Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. - Davide Bisi; Antonio Stocco; Matteo Meneghini; Fabiana Rampazzo; Andrea Cester; Gaudenzio Meneghesso; Enrico Zanoni (ESSDERC, 2014)

Breakdown investigation in GaN-based MIS-HEMT devices. - Fabio Alessio Marino; Davide Bisi; Matteo Meneghini; Giovanni Verzellesi; Enrico Zanoni; Marleen Van Hove; Shuzhen You; Stefaan Decoutere; Denis Marcon; Steve Stoffels; Nicolo Ronchi; Gaudenzio Meneghesso (ESSDERC, 2014)

Proton induced trapping effect on space compatible GaN HEMTs. - Antonio Stocco; Simone Gerardin; Davide Bisi; Stefano Dalcanale; Fabiana Rampazzo; Matteo Meneghini; Gaudenzio Meneghesso; Jan Grünenpütt; Benoit Lambert; Hervé Blanck; Enrico Zanoni (Microelectron. Reliab., 2014)

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. - Matteo Meneghini; Riccardo Silvestri; Stefano Dalcanale; Davide Bisi; Enrico Zanoni; Gaudenzio Meneghesso; Piet Vanmeerbeek; Abhishek Banerjee 003; Peter Moens (IRPS, 2015)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. - Isabella Rossetto; Matteo Meneghini; Davide Bisi; Alessandro Barbato; Marleen Van Hove; Denis Marcon; Tian-Li Wu; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2015)

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. - Gaudenzio Meneghesso; Matteo Meneghini; Davide Bisi; Isabella Rossetto; Tian-Li Wu; Marleen Van Hove; Denis Marcon; Steve Stoffels; Stefaan Decoutere; Enrico Zanoni (Microelectron. Reliab., 2016)

Short-Circuit Capability with GaN HEMTs : Invited. - Davide Bisi; Bill Cruse; Philip Zuk; Primit Parikh; Umesh K. Mishra; Tsutomu Hosoda; Masamichi Kamiyama; Masahito Kanamura (IRPS, 2022)

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. - Marco Saro; Francesco de Pieri; Andrea Carlotto; Mirko Fornasier; Fabiana Rampazzo; Carlo De Santi; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Davide Bisi; Matthew Guidry; Stacia Keller; et al. (IRPS, 2024)

3 Factor Accelerated Lifetime Testing in Lateral GaN Power HEMTs: A Tutorial. - S. Wienecke; R. Barr; W. Cruse; A. Wong; L. Shen; P. Smith; K. Shono; R. Lal; G. Gupta; Davide Bisi; C. Neufeld (IRPS, 2025)