On the strain induced by arsenic into silicon. - Stéphane Koffel; Peter Pichler; Jürgen Lorenz; Gabriele Bisognin; Enrico Napolitani; Davide De Salvador (ESSDERC, 2013)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)