Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. - Davide Favero; Carlo De Santi; Kalparupa Mukherjee; Karen Geens; Matteo Borga; Benoit Bakeroot; Shuzhen You; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2022)

High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. - Davide Favero; A. Cavaliere; Carlo De Santi; Matteo Borga; W. Gonçalez Filho; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2023)

$ mathrm{R}_{ text{ON}}$ and $ mathrm{V}_{ text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout. - Davide Favero; Carlo De Santi; Arno Stockman; Arianna Nardo; Piet Vanmeerbeek; Marnix Tack; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini (IRPS, 2024)

Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias. - S. L. Longato; Davide Favero; Arno Stockman; Arianna Nardo; Piet Vanmeerbeek; Marnix Tack; Gaudenzio Meneghesso; Enrico Zanoni; C. De Santi; Matteo Meneghini (IRPS, 2025)