Dielectric Reliability Study of 21 nm Pitch Interconnects with Barrierless Ru Fill. - Alicja Lesniewska; Philippe J. Roussel; Davide Tierno; Victor Vega-Gonzalez; Marleen H. van der Veen; Patrick Verdonck; Nicolas Jourdan 002; Christopher J. Wilson; Zsolt Tökei; Kris Croes (IRPS, 2020)

Reliability of Mo as Word Line Metal in 3D NAND. - Davide Tierno; Kristof Croes; Arjun Ajaykumar; Siva Ramesh; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2021)

Reliability Investigation of W2W Hybrid Bonding Interface: Breakdown Voltage and Leakage Mechanism. - Lin Hou; Emmanuel Chery; Kristof Croes; Davide Tierno; Soon Aik Chew; Yangyin Chen; Peter Rakbin; Eric Beyne (IRPS, 2022)

Pure-Metal Replacement Gate for Reliable 30 nm Pitch Scaled 3D NAND Flash. - S. Rachidi; S. Ramesh; Davide Tierno; G. L. Donadio; A. Pacco; J. W. Maes; Y. Jeong; Antonio Arreghini; Geert Van den Bosch; Maarten Rosmeulen (IMW, 2024)

Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NAND. - Davide Tierno; Antonio Arreghini; Alicja Lesniewska; Y. Jeong; Marleen H. van der Veen; J. Stiers; N. Bazzazian; Ivan Ciofi; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

Mitigating Line-Break Defectivity with a Sandwiched TiN or W Layer for Metal Pitch 18 NM Aspect Ratio 6 Semi-Damascene Interconnects. - Anshul Gupta; Shreya Kundu; Stefan Decoster; K. Sah; G. Delie; B. Truijen; Davide Tierno; Giulio Marti; O. Varela Pedreira; B. Kenens; Y. Hermans; C. Adelmann; et al. (VLSI Technology and Circuits, 2024)