Impact of within-wafer process variability on radiation response. - Zhiyuan Hu; Zhangli Liu; Hua Shao; Zhengxuan Zhang; Bingxu Ning; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. J., 2011)

The impact of total ionizing radiation on body effect. - Bingxu Ning; Zhiyuan Hu; Zhengxuan Zhang; Zhangli Liu; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. J., 2011)

Total ionizing dose effects in elementary devices for 180-nm flash technologies. - Zhiyuan Hu; Zhangli Liu; Hua Shao; Zhengxuan Zhang; Bingxu Ning; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. Reliab., 2011)

Comparison of TID response in core, input/output and high voltage transistors for flash memory. - Zhangli Liu; Zhiyuan Hu; Zhengxuan Zhang; Hua Shao; Ming Chen 007; Dawei Bi; Bingxu Ning; Shichang Zou (Microelectron. Reliab., 2011)

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. - Bingxu Ning; Zhengxuan Zhang; Zhangli Liu; Zhiyuan Hu; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. Reliab., 2012)

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs. - Bingxu Ning; Dawei Bi; Huixiang Huang; Zhengxuan Zhang; Ming Chen 007; Shichang Zou (Microelectron. J., 2013)

Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. - Bingxu Ning; Dawei Bi; Huixiang Huang; Zhengxuan Zhang; Zhiyuan Hu; Ming Chen 007; Shichang Zou (Microelectron. Reliab., 2013)

Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment. - Huixiang Huang; Dawei Bi; Zhengxuan Zhang (Microelectron. J., 2014)

Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation. - Chao Peng; Zhiyuan Hu; Zhengxuan Zhang; Huixiang Huang; Bingxu Ning; Dawei Bi (Microelectron. Reliab., 2014)

Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs. - Shuang Fan; Bingxu Ning; Zhiyuan Hu; Zhengxuan Zhang; Dawei Bi; Chao Peng; Lei Song; Lihua Dai (Microelectron. Reliab., 2016)

Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation. - Huixiang Huang; Yanyan Huang; Jiachun Zheng; Sufen Wei; Kai Tang; Dawei Bi; Zhengxuan Zhang (Microelectron. Reliab., 2016)

Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs. - Lihua Dai; Xiaonian Liu; Mengying Zhang; Leqing Zhang; Zhiyuan Hu; Dawei Bi; Zhengxuan Zhang; Shichang Zou (Microelectron. Reliab., 2017)

Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer. - Xin Xie; Huilong Zhu; Mengying Zhang; Dawei Bi; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2019)

Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET. - Huilong Zhu; Dawei Bi; Xin Xie; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (IEICE Electron. Express, 2020)

An energy-efficient level shifter based on a differential cascade voltage switch structure. - Haineng Zhang; Zhongyang Liu; Dawei Bi; Zhengxuan Zhang; Zhiyi Xiao; Ruofan Dai (Int. J. Circuit Theory Appl., 2023)

A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application. - Zhongyang Liu; Yuqiao Xie; Tao Xu; Qing Liu; Dawei Bi; Zhiyuan Hu; Shichang Zou; Zhengxuan Zhang (Int. J. Circuit Theory Appl., 2023)

A novel high-precision single-event transient hardened voltage comparator design. - Yuqiao Xie; Zhongyang Liu; Tao Xu; Dawei Bi; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (Int. J. Circuit Theory Appl., 2023)

An ultra low-power double-node-upsets hardened latch design. - Zhuo Chen; Yuqiao Xie; Jingfeng Liang; Dawei Bi; Zhiyuan Hu; Zhengxuan Zhang (Int. J. Circuit Theory Appl., 2024)

A 0.75 µA-quiescent current, output capacitor-less LDO regulator with high power supply rejection. - Zhengliang Zhao; Lili Lang; Dawei Bi; Yemin Dong (IEICE Electron. Express, 2025)

A programmable high efficiency charge pump system for embedded flash memory with improved current driving capability. - Tao Xu; Yuqiao Xie; Guoji Qiu; Zhiyuan Hu; Zhengxuan Zhang; Dawei Bi (Microelectron. J., 2025)

High-precision single-event transient hardened comparator with the sensitive node transient detection feedback latch technique. - Yuqiao Xie; Tao Xu; Zhongyang Liu; Guoji Qiu; Dawei Bi; Zhiyuan Hu; Zhengxuan Zhang; Shichang Zou (Int. J. Circuit Theory Appl., 2025)