High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts. - Mengdi Li; Jiejie Zhu; Sheng Zhang; Bowen Zhang; Yuxi Zhou; Dayan Yuan; Lingjie Qin; Mingchen Zhang; Qingyuan Chang; Chupeng Yi; Ke Wei; Xinyu Liu; et al. (Sci. China Inf. Sci., 2025)