Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor. - Miaomiao Wang 006; Jingyun Zhang; Huimei Zhou; Richard G. Southwick; Robin Hsin Kuo Chao; Xin Miao; Veeraraghavan S. Basker; Tenko Yamashita; Dechao Guo; Gauri Karve; Huiming Bu; James H. Stathis (IRPS, 2019)

Filtering Design of Switched Systems With Markovian Jump Parameters and Lipschitz Nonlinearity via Fuzzy Approach. - Yang Wang 035; Dechao Guo; Xiaolei Ji (IEEE Access, 2019)

TDDB Reliability in Gate-All-Around Nanosheet. - Huimei Zhou; Miaomiao Wang 006; Ruqiang Bao; Tian Shen; Ernest Y. Wu; Richard G. Southwick; Jingyun Zhang; Veeraraghavan S. Basker; Dechao Guo (IRPS, 2021)

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation. - Ernest Y. Wu; Ron Bolam; Baozhen Li; Tian Shen; Barry P. Linder; Griselda Bonilla; Miaomiao Wang 006; Dechao Guo (IRPS, 2022)

Backside Power Distribution for Nanosheet Technologies Beyond 2nm. - Ruilong Xie; Wonhyuk Hong; Chen Zhang; Jongjin Lee; Kevin Brew; Richard Johnson; Nicholas A. Lanzillo; Hosadurga Shobha; Taesun Kim; Panjae Park; Shogo Mochizuki; Iqbal Saraf; et al. (VLSI Technology and Circuits, 2024)