Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors. - Elena Atanassova; Dencho Spassov; Albena Paskaleva (Microelectron. Reliab., 2007)

Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks. - Elena Atanassova; Nenad Novkovski; Albena Paskaleva; Dencho Spassov (Microelectron. Reliab., 2010)

Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity. - Dencho Spassov; Elena Atanassova; Albena Paskaleva (Microelectron. Reliab., 2011)

Doped Ta2O5 and mixed HfO2-Ta2O5 films for dynamic memories applications at the nanoscale. - Elena Atanassova; Albena Paskaleva; Dencho Spassov (Microelectron. Reliab., 2012)

Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack. - Elena Atanassova; Nenad Novkovski; Dencho Spassov; Albena Paskaleva; Aleksandar Skeparovski (Microelectron. Reliab., 2014)

A review of pulsed NBTI in P-channel power VDMOSFETs. - Danijel Dankovic; Ivica Manic; Aneta Prijic; Vojkan Davidovic; Zoran Prijic; Snezana Golubovic; Snezana Djoric-Veljkovic; Albena Paskaleva; Dencho Spassov; Ninoslav Stojadinovic (Microelectron. Reliab., 2018)

Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. - Sandra Veljkovic; Nikola Mitrovic; Vojkan Davidovic; Snezana Golubovic; Snezana Djoric-Veljkovic; Albena Paskaleva; Dencho Spassov; Srboljub Stankovic; Marko S. Andjelkovic; Zoran Prijic; Ivica Manic; Aneta Prijic; et al. (J. Circuits Syst. Comput., 2022)