GaN-based HEMTs tested under high temperature storage test. - Denis Marcon; Xuanwu Kang; John Viaene; Marleen Van Hove; Puneet Srivastava; Stefaan Decoutere; Robert Mertens 004; Gustaaf Borghs (Microelectron. Reliab., 2011)

High temperature behaviour of GaN-on-Si high power MISHEMT devices. - Dirk Wellekens; Rafael Venegas; Xuanwu Kang; Mohammed Zahid; Tian-Li Wu; Denis Marcon; Puneet Srivastava; Marleen Van Hove; Stefaan Decoutere (ESSDERC, 2012)

Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. - Denis Marcon; John Viaene; Paola Favia; Hugo Bender; Xuanwu Kang; Silvia Lenci; Steve Stoffels; Stefaan Decoutere (Microelectron. Reliab., 2012)

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. - Paul Marko; Matteo Meneghini; Sergey Bychikhin; Denis Marcon; Gaudenzio Meneghesso; Enrico Zanoni; Dionyz Pogany (Microelectron. Reliab., 2012)

Breakdown investigation in GaN-based MIS-HEMT devices. - Fabio Alessio Marino; Davide Bisi; Matteo Meneghini; Giovanni Verzellesi; Enrico Zanoni; Marleen Van Hove; Shuzhen You; Stefaan Decoutere; Denis Marcon; Steve Stoffels; Nicolo Ronchi; Gaudenzio Meneghesso (ESSDERC, 2014)

Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. - Tian-Li Wu; Denis Marcon; Steve Stoffels; Shuzhen You; Brice De Jaeger; Marleen Van Hove; Guido Groeseneken; Stefaan Decoutere (Microelectron. Reliab., 2014)

Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. - Tian-Li Wu; Denis Marcon; Brice De Jaeger; Marleen Van Hove; Benoit Bakeroot; Steve Stoffels; Guido Groeseneken; Stefaan Decoutere; Robin Roelofs (IRPS, 2015)

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. - Isabella Rossetto; Matteo Meneghini; Davide Bisi; Alessandro Barbato; Marleen Van Hove; Denis Marcon; Tian-Li Wu; Stefaan Decoutere; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2015)

Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. - Gaudenzio Meneghesso; Matteo Meneghini; Davide Bisi; Isabella Rossetto; Tian-Li Wu; Marleen Van Hove; Denis Marcon; Steve Stoffels; Stefaan Decoutere; Enrico Zanoni (Microelectron. Reliab., 2016)

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. - Isabella Rossetto; Matteo Meneghini; Vanessa Rizzato; Maria Ruzzarin; Andrea Favaron; Steve Stoffels; Marleen Van Hove; Niels Posthuma; Tian-Li Wu; Denis Marcon; Stefaan Decoutere; Gaudenzio Meneghesso; et al. (Microelectron. Reliab., 2016)