Characterization and Modeling of Gate-Induced-Drain-Leakage. - Fabien Gilibert; Denis Rideau; Alexandre Dray; François Agut; Michel Minondo; Andre Juge; Pascal Masson; Rachid Bouchakour (IEICE Trans. Electron., 2005)

Microscopic scale characterization and modeling of transistor degradation under HC stress. - Yoann Mamy Randriamihaja; Vincent Huard; Xavier Federspiel; Alban Zaka; Pierpaolo Palestri; Denis Rideau; David Roy 001; Alain Bravaix (Microelectron. Reliab., 2012)

Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. - François Andrieu; Mikaël Cassé; E. Baylac; P. Perreau; O. Nier; Denis Rideau; R. Berthelon; Franck Pourchon; A. Pofelski; Barbara De Salvo; C. Gallon; Vincent Mazzocchi; et al. (ESSDERC, 2014)

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies. - Frederic Monsieur; Yvan Denis; Denis Rideau; Vincent Quenette; Gilles Gouget; Clément Tavernier; Hervé Jaouen; Gérard Ghibaudo; Joris Lacord (ESSDERC, 2014)

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD. - Gabriel Mugny; F. G. Pereira; Denis Rideau; François Triozon; Yann-Michel Niquet; Marco Pala 001; D. Garetto; Christophe Delerue (ESSDERC, 2016)

Integration of SPAD in 28nm FDSOI CMOS technology. - Tulio Chaves de Albuquerque; Françis Calmon; Raphael Clerc; Patrick Pittet; Younes Benhammou; Dominique Golanski; Sebastien Jouan; Denis Rideau; Andreia Cathelin (ESSDERC, 2018)

Semi-Empirical model for optical properties of Si1-xGex alloys accounting for strain and temperature. - Jérémy Grebot; Gabriel Mugny; Rémi Helleboid; Isobel Nicholson; Francesco Abbate; Denis Rideau; Hélène Wehbe-Alause; Claire Scheid; Stéphane Lanteri (ESSDERC, 2021)

Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices. - Rémi Helleboid; Denis Rideau; Isobel Nicholson; Norbert Moussy; Olivier Saxod; Marie Basset; Jérémy Grebot; Antonin Zimmerman; Bastien Mamdy; Dominique Golanski; Megan Agnew; Sara Pellegrini; et al. (ESSDERC, 2021)

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. - Mathieu Sicre; Megan Agnew; Christel Buj; Jean Coignus; Dominique Golanski; Rémi Helleboid; Bastien Mamdy; Isobel Nicholson; Sara Pellegrini; Denis Rideau; David Roy 001; Françis Calmon (ESSDERC, 2021)

Statistical measurements and Monte-Carlo simulations of DCR in SPADs. - Mathieu Sicre; Megan Agnew; Christel Buj; Caroline Coutier; Dominique Golanski; Rémi Helleboid; Bastien Mamdy; Isobel Nicholson; Sara Pellegrini; Denis Rideau; David Roy 001; Françis Calmon (ESSCIRC, 2022)

A self-sustaining Single Photon Avalanche Diode Model. - Sven Rink; V. Quenette; Jean-Robert Manouvrier; Andre Juge; Gilles Gouget; Denis Rideau; R. A. Bianchi; Dominique Golanski; Bastien Mamdy; Jean-Baptiste Kammerer; Wilfried Uhring; Christophe Lallement; et al. (ESSDERC, 2022)

On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact models. - Dorian Saint-Pierre; Raphaël Clerc; Rémi Helleboid; Denis Rideau (ESSDERC, 2022)

Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs. - Denis Rideau; Wilfried Uhring; R. A. Bianchi; Rémi Helleboid; Gabriel Mugny; Jérémy Grebot; Jean-Robert Manouvrier; R. Neri; F. Brun; Mohammadreza Dolatpoor Lakeh; Sven Rink; Jean-Baptiste Kammerer; et al. (ESSDERC, 2023)