Abruptly-Switching MoS₂-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO₂-Based Threshold Switching Device. - Sojin Jeong; Sangwoo Han; Ho-Jun Lee; Deokjoon Eom; Gisu Youm; Yejoo Choi; Seungjun Moon; Kyungjin Ahn; Jinju Oh; Changhwan Shin (IEEE Access, 2021)

Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr: HfO2 Ferroelectric Capacitor. - Yejoo Choi; Changwoo Han; Jaemin Shin 003; Seungjun Moon; Jinhong Min; Hyeonjung Park; Deokjoon Eom; Jehoon Lee; Changhwan Shin (Sensors, 2022)