A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jong Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (ISSCC, 2008)

A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate. - Yan Li; Seungpil Lee; Yupin Fong; Feng Pan; Tien-Chien Kuo; Jongmin Park; Tapan Samaddar; Hao Nguyen; Man Mui; Khin Htoo; Teruhiko Kamei; Masaaki Higashitani; et al. (IEEE J. Solid State Circuits, 2009)

9.1 A 45nm CMOS RF-to-Bits LTE/WCDMA FDD/TDD 2×2 MIMO base-station transceiver SoC with 200MHz RF bandwidth. - Nikolaus Klemmer; Siraj Akhtar; Venkatesh Srinivasan; Petteri Litmanen; Himanshu Arora; Satish Uppathil; Scott Kaylor; A. Akour; Victoria Wang; Mounir Fares; F. Dulger; A. Frank; et al. (ISSCC, 2016)