Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. - Alain Bravaix; Didier Goguenheim; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2001)

Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. - Alain Bravaix; C. Trapes; Didier Goguenheim; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2003)

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. - Alain Bravaix; Didier Goguenheim; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2004)

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. - Alain Bravaix; Didier Goguenheim; Mickael Denais; Vincent Huard; C. R. Parthasarathy; F. Perrier; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2005)

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. - Didier Goguenheim; Alain Bravaix; S. Gomri; J. M. Moragues; C. Monserie; N. Legrand; Philippe Boivin (Microelectron. Reliab., 2005)

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. - C. Trapes; Didier Goguenheim; Alain Bravaix (Microelectron. Reliab., 2005)

Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. - Didier Goguenheim; D. Pic; Jean-Luc Ogier (Microelectron. Reliab., 2007)

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. - D. Pic; Didier Goguenheim; Jean-Luc Ogier (Microelectron. Reliab., 2007)

Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown. - D. Pic; Didier Goguenheim; Jean-Luc Ogier (Microelectron. Reliab., 2008)

Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. - D. Pic; Arnaud Régnier; V. Pean; Jean-Luc Ogier; Didier Goguenheim (Microelectron. Reliab., 2008)

Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities. - Christelle Bénard; Gaëtan Math; Pascal Fornara; Jean-Luc Ogier; Didier Goguenheim (Microelectron. Reliab., 2009)

Distance measurement using narrowband ZigBee devices. - Florian Barrau; Bruno Paille; Edith Kussener; Didier Goguenheim (WOCC, 2014)