0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer. - Cenk Ibrahim Ozdemir; Yannick de Koninck; Didit Yudistira; Nadezda Kuznetsova; Marina Baryshnikova; Dries Van Thourhout; Bernardette Kunert; Marianna Pantouvaki; Joris Van Campenhout (ECOC, 2020)

Graphene electro-absorption modulators integrated at wafer-scale in a CMOS fab. - Cheng Han Wu; Steven Brems; Didit Yudistira; Daire Cott; A. Milenin; Kevin Vandersmissen; A. Maestre; A. Centeno; Joris Van Campenhout; Cedric Huyghebaert; Marianna Pantouvaki (VLSI Circuits, 2021)

Wafer-Level Aging of InGaAs/GaAs Nano-Ridge p-i-n Diodes Monolithically Integrated on Silicon. - Ping-Yi Hsieh; Artemisia Tsiara; Barry J. O'Sullivan; Didit Yudistira; Marina Baryshnikova; Guido Groeseneken; Bernardette Kunert; Marianna Pantouvaki; Joris Van Campenhout; Ingrid De Wolf (IRPS, 2022)

Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors. - Ping-Yi Hsieh; Ameni Ben Driss; Artemisia Tsiara; Barry J. O'Sullivan; Didit Yudistira; Bernardette Kunert; Joris Van Campenhout; Ingrid De Wolf (IRPS, 2024)

Lifetime Model for Enabling Reliable InGaAs/GaAs Nano-Ridge Lasers Monolithically Integrated on 300 mm Silicon. - Ping-Yi Hsieh; Artemisia Tsiara; Barry J. O'Sullivan; Sara El Akel; Huseyin Sar; Debi Prasad Panda; Peter Swekis; Didit Yudistira; Bernardette Kunert; Joris Van Campenhout; Ingrid De Wolf (OFC, 2025)