DNA electrical detection based on inductor resonance frequency in standard CMOS technology. - G. Laurent; Luis Moreno Hagelsieb; Dimitri Lederer; P. E. Lobert; Denis Flandre; J. Remacle; Jean-Pierre Raskin (ESSCIRC, 2003)

Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. - C. Roda Neve; Valeria Kilchytska; Joaquín Alvarado; Dimitri Lederer; O. Militaru; Denis Flandre; Jean-Pierre Raskin (Microelectron. Reliab., 2011)

Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. - Pieter Cardinael; Sachin Yadav 001; Ming Zhao; Martin Rack; Dimitri Lederer; Nadine Collaert; Bertrand Parvais; Jean-Pierre Raskin (ESSDERC, 2021)

Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI. - Sameer H. Jain; Dimitri Lederer; Arvind Kumar; Sudesh Saroop; Chris Prindle; P. Srinivasan 002; Wen Liu; Ravi Achanta; Erdem Kaltalioglu; Stephen Moss; Greg Freeman; Paul Colestock (ESSDERC, 2021)

Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI. - Martin Rack; Lucas Nyssens; Quentin Courte; Dimitri Lederer; Jean-Pierre Raskin (ESSDERC, 2021)

CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. - Sachin Yadav 001; Pieter Cardinael; Ming Zhao; Komal Vondkar; Uthayasankaran Peralagu; AliReza Alian; Ahmad Khaled; Sergej Makovejev; Enrique Ekoga; Dimitri Lederer; Jean-Pierre Raskin; Bertrand Parvais; et al. (ICICDT, 2021)

RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications. - P. Srinivasan 002; Fernando Guarin; Shafi Syed; Joris Angelo Sundaram Jerome; Wen Liu; Sameer H. Jain; Dimitri Lederer; Stephen Moss; Paul Colestock; Anirban Bandyopadhyay; Ned Cahoon; Byoung Min; et al. (IRPS, 2021)

Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI. - Youssef Bendou; Martin Rack; Dimitri Lederer; Andreia Cathelin; Jean-Pierre Raskin (NEWCAS, 2023)

Analysis of Back-Gate Bias Control on EVM Measurements of a Dual-Band Power Amplifier in 22 nm FD-SOI for 5G 28 and 39 GHz Applications. - Lucas Nyssens; M. Nabet; Martin Rack; Youssef Bendou; Sidina Wane; Jacques Sombrin; Jean-Pierre Raskin; Dimitri Lederer (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)