HKMG CMOS technology qualification: The PBTI reliability challenge. - Dimitris P. Ioannou (Microelectron. Reliab., 2014)

Hot carrier effects on the RF performance degradation of nanoscale LNA SOI nFETs. - Dimitris P. Ioannou; Y. Tan; R. Logan; K. Bandy; R. Achanta; P. C. Wang; Dave Brochu; M. Jaffe (IRPS, 2018)

Physics of Hot Carrier Degradation Under Saturation Mode Operation in SiGe HBTs. - Uppili S. Raghunathan; Pui Yee; Dave Brochu; Vibhor Jain; Harrison P. Lee; John D. Cressler; Dimitris P. Ioannou (BCICTS, 2020)

Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTs. - Dimitris P. Ioannou; Uppili S. Raghunathan; Dave Brochu; Adam W. DiVergilio; Vibhor Jain; John J. Pekarik (BCICTS, 2021)

Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz. - Uppili S. Raghunathan; Saurabh Sirohi; Vaibhav Ruparelia; Prateek Kumar Sharma; Dimitris P. Ioannou; Vibhor Jain; H. K. Kakara; S. Gedela; Venkat Vanukuru; P. Dongmo; C. Luce; R. Hazbun; et al. (BCICTS, 2022)

Robust Off-State TDDB Reliability of n-LDMOS. - Wen Liu; Dimitris P. Ioannou; Johnatan Kantarovsky; Byoung Min; Tanya Nigam (IRPS, 2022)

Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs. - Dimitris P. Ioannou; Ephrem G. Gebreselasie; Vinh Pham; Uppili S. Raghunathan (BCICTS, 2023)

High Temperature Annealing induced recovery of Hot-Carrier degradation in High Performance NPN SiGe HBTs. - Dimitris P. Ioannou; Adam W. DiVergilio (BCICTS, 2024)