Robust PEALD SiN spacer for gate first high-k metal gate integration. - D. H. Triyoso; V. Jaschke; Jeff Shu; S. Mutas; Klaus Hempel; Jamie K. Schaeffer; Markus Lenski (ICICDT, 2012)

Impact of precursors choice on characteristics of PEALD SiN for spacer applications. - Dina H. Triyoso; Klaus Hempel; Susanne Ohsiek; Jeff Shu; Jamie K. Schaeffer; Markus Lenski (ICICDT, 2013)

ALD Ta2O5 and Hf-doped Ta2O5 for BEOL compatible MIM. - D. H. Triyoso; Wenke Weinreich; Konrad Seidel; Mark G. Nolan; Patrick Polakowski; D. Utess; Susanne Ohsiek; K. Dittmar; M. Weisheit; M. Licbau; R. Fox (ICICDT, 2014)

ALD ZrO2 processes for BEoL device applications. - Wenke Weinreich; Konrad Seidel; Patrick Polakowski; Stefan Riedel; Lutz Wilde; Dina H. Triyoso; Mark G. Nolan (ICICDT, 2014)

Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges. - D. H. Triyoso; Rick Carter; J. Kluth; K. Hempel; M. Gribelyuk; L. Kang; A. Kumar; Bob Mulfinger; P. Javorka; K. Punchihewa; A. Child; T. McArdle; et al. (ICICDT, 2016)

La-doped ZrO2 based BEoL decoupling capacitors. - Wenke Weinreich; Konrad Seidel; Patrick Polakowski; Maximilian Drescher; A. Gummenscheimer; Mark G. Nolan; L. Cheng; D. H. Triyoso (ICICDT, 2016)

Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. - D. H. Triyoso; G. R. Mulfinger; K. Hempel; H. Tao; F. Koehler; L. Kang; A. Kumar; T. McArdle; J. Holt; A. L. Child; S. Straub; F. Ludwig; et al. (ICICDT, 2017)

High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETs. - U. Rana; D. P. Brunco; S. Raman; Dina H. Triyoso; M. W. Stoker; Jeffrey B. Johnson; Luigi Pantisano; K. D. Seo; M. Zhao; A. Reznicek; R. Krishnan; B. Moser; et al. (DRC, 2019)