A 32 kb 55 nm Radiation-Hardened SRAM Chip With SEU ≤1.1 E-11 Upsets/Bit-Day, SEL >107.1 MeV ⋅ cm²/mg, and TID >100 Krad(Si) for Space Applications. - Deming Zhang; Jiaxin Yang; Dingyi Luo; Jianpeng Zhang; Lang Zeng; Bi Wang 002; Yue Zhang 010; Weisheng Zhao (IEEE Trans. Circuits Syst. I Regul. Pap., 2025)