Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures. - Sergey Bychikhin; Martin Litzenberger; R. Pichler; Dionyz Pogany; Erich Gornik; Gerhard Groos; Matthias Stecher (Microelectron. Reliab., 2001)

Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. - Martin Litzenberger; R. Pichler; Sergey Bychikhin; Dionyz Pogany; Erich Gornik; Kai Esmark; Harald Gossner (Microelectron. Reliab., 2001)

Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions. - M. Blaho; Dionyz Pogany; L. Zullino; A. Andreini; Erich Gornik (Microelectron. Reliab., 2002)

Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique. - Dionyz Pogany; Ján Kuzmík; J. Darmo; Martin Litzenberger; Sergey Bychikhin; Karl Unterrainer; Z. Mozolova; S. Hascik; Tibor Lalinsky; Erich Gornik (Microelectron. Reliab., 2002)

Device Simulation and Backside Laser Interferometry–Powerful Tools for ESD Protection Development. - Wolfgang Stadler; Kai Esmark; Harald Gossner; Martin Streibl; M. Wendel; Wolfgang Fichtner; Dionyz Pogany; Martin Litzenberger; Erich Gornik (Microelectron. Reliab., 2002)

Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. - M. Blaho; Dionyz Pogany; Erich Gornik; Marie Denison; Gerhard Groos; Matthias Stecher (Microelectron. Reliab., 2003)

A dual-beam Michelson interferometer for investigation of trigger dynamics in ESD protection devices under very fast TLP stress. - Viktor Dubec; Sergey Bychikhin; M. Blaho; Dionyz Pogany; Erich Gornik; J. Willemen; Ning Qu; Wolfgang Wilkening; L. Zullino; A. Andreini (Microelectron. Reliab., 2003)

Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress. - Sergey Bychikhin; Viktor Dubec; Dionyz Pogany; Erich Gornik; M. Graf; V. Dudek; Winfried Soppa (Microelectron. Reliab., 2004)

Multiple-time-instant 2D thermal mapping during a single ESD event. - Viktor Dubec; Sergey Bychikhin; M. Blaho; Michael Heer; Dionyz Pogany; Marie Denison; Nils Jensen; Matthias Stecher; Gerhard Groos; Erich Gornik (Microelectron. Reliab., 2004)

Automated setup for thermal imaging and electrical degradation study of power DMOS devices. - Michael Heer; Viktor Dubec; M. Blaho; Sergey Bychikhin; Dionyz Pogany; Erich Gornik; Marie Denison; Matthias Stecher; Gerhard Groos (Microelectron. Reliab., 2005)

Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices. - Martin Litzenberger; Christoph Furböck; Sergey Bychikhin; Dionyz Pogany; Erich Gornik (IEEE Trans. Instrum. Meas., 2005)

Analysis of triggering behaviour of high voltage CMOS LDMOS clamps and SCRs during ESD induced latch-up. - Michael Heer; Viktor Dubec; Sergey Bychikhin; Dionyz Pogany; Erich Gornik; M. Frank; A. Konrad; J. Schulz (Microelectron. Reliab., 2006)

Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping. - Sergey Bychikhin; T. Swietlik; Tadeusz Suski; Sylwester Porowski; Piotr Perlin; Dionyz Pogany (Microelectron. Reliab., 2007)

Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures. - Karol Cico; Ján Kuzmík; Dagmar Gregusová; Roman Stoklas; Tibor Lalinsky; Alexandros G. Georgakilas; Dionyz Pogany; Karol Fröhlich (Microelectron. Reliab., 2007)

Backside interferometric methods for localization of ESD-induced leakage current and metal shorts. - Viktor Dubec; Sergey Bychikhin; Dionyz Pogany; Erich Gornik; Tilo Brodbeck; Wolfgang Stadler (Microelectron. Reliab., 2007)

Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices. - Michael Heer; Sergey Bychikhin; W. Mamanee; Dionyz Pogany; A. Heid; P. Grombach; M. Klaussner; Winfried Soppa; Bernd Ramler (Microelectron. Reliab., 2007)

Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications. - Michael Heer; P. Grombach; A. Heid; Dionyz Pogany (Microelectron. Reliab., 2008)

Thermal imaging of smart power DMOS transistors in the thermally unstable regime using a compact transient interferometric mapping system. - Georg Haberfehlner; Sergey Bychikhin; Viktor Dubec; Michael Heer; A. Podgaynaya; M. Pfost; Matthias Stecher; Erich Gornik; Dionyz Pogany (Microelectron. Reliab., 2009)

Transient interferometric mapping of carrier plasma during external transient latch-up phenomena in latch-up test structures and I/O cells processed in CMOS technology. - Michael Heer; Krzysztof Domanski; Kai Esmark; Ulrich Glaser; Dionyz Pogany; Erich Gornik; Wolfgang Stadler (Microelectron. Reliab., 2009)

IR thermography and FEM simulation analysis of on-chip temperature during thermal-cycling power-metal reliability testing using in situ heated structures. - Helmut Köck; Vladimír Kosel; Christian Djelassi; Michael Glavanovics; Dionyz Pogany (Microelectron. Reliab., 2009)

Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation. - Sergey Bychikhin; Georg Haberfehlner; J. Rhayem; Daniel Vanderstraeten; Renaud Gillon; Dionyz Pogany (Microelectron. Reliab., 2010)

Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization. - A. Podgaynaya; Ralf Rudolf; B. Elattari; Dionyz Pogany; Erich Gornik; Matthias Stecher; Marc Strasser (Microelectron. Reliab., 2010)

Improved thermal management of low voltage power devices with optimized bond wire positions. - Helmut Köck; Christian Djelassi; Stefano de Filippis; Robert Illing; Michael Nelhiebel; Markus Ladurner; Michael Glavanovics; Dionyz Pogany (Microelectron. Reliab., 2011)

Application of transient interferometric mapping method for ESD and latch-up analysis. - Dionyz Pogany; Sergey Bychikhin; Michael Heer; W. Mamanee; Erich Gornik (Microelectron. Reliab., 2011)

Electro-thermal characterization and simulation of integrated multi-trenched XtreMOSTM power devices. - J. Rhayem; B. Besbes; Raul Blecic; Sergey Bychikhin; Georg Haberfehlner; Dionyz Pogany; B. Desoete; Renaud Gillon; Aarnout Wieers; Marnix Tack (Microelectron. J., 2012)

IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. - Paul Marko; Matteo Meneghini; Sergey Bychikhin; Denis Marcon; Gaudenzio Meneghesso; Enrico Zanoni; Dionyz Pogany (Microelectron. Reliab., 2012)

HMM-TLP correlation for system-efficient ESD design. - Guido Notermans; Sergey Bychikhin; Dionyz Pogany; David Johnsson; Dejan M. Maksimovic (Microelectron. Reliab., 2012)

Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. - Clemens Ostermaier; Peter Lagger; Mohammed Alomari; Patrick Herfurth; David Maier 002; Alexander Alexewicz; Marie-Antoinette di Forte-Poisson; Sylvain L. Delage; Gottfried Strasser; Dionyz Pogany; Erhard Kohn (Microelectron. Reliab., 2012)

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Rimma Zhytnytska; Sergey Bychikhin; Mattia Capriotti; Oliver Hilt; Domenica Visalli; Gaudenzio Meneghesso; Enrico Zanoni; Joachim Würfl; Joff Derluyn; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2013)

E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator. - Mattia Capriotti; Clément Fleury; Ole Bethge; Matteo Rigato; Suzanne Lancaster; Dionyz Pogany; Gottfried Strasser; Eldad Bahat-Treidel; Oliver Hilt; Frank Brunner; Joachim Würfl (ESSDERC, 2015)

Thermal activation of PBTI-related stress and recovery processes in GaN MIS-HEMTs using on-wafer heaters. - Peter Lagger; S. Donsa; P. Spreitzer; Gregor Pobegen; M. Reiner; H. Naharashi; J. Mohamed; H. Mosslacher; G. Prechtl; Dionyz Pogany; Clemens Ostermaier (IRPS, 2015)

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Mattia Capriotti; Matteo Rigato; Oliver Hilt; Joachim Würfl; Joff Derluyn; Stephan Steinhauer; Anton Köck; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2015)

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique. - Matteo Rigato; Clément Fleury; Michael Heer; Mattia Capriotti; Werner Simbürger; Dionyz Pogany (Microelectron. Reliab., 2015)

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure. - Matteo Meneghini; Oliver Hilt; Clément Fleury; Riccardo Silvestri; Mattia Capriotti; Gottfried Strasser; Dionyz Pogany; Eldad Bahat-Treidel; Frank Brunner; A. Knauer; Joachim Würfl; Isabella Rossetto; et al. (Microelectron. Reliab., 2016)

TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs. - Clément Fleury; Guido Notermans; Hans-Martin Ritter; Dionyz Pogany (Microelectron. Reliab., 2017)

Review of bias-temperature instabilities at the III-N/dielectric interface. - Clemens Ostermaier; Peter Lagger; M. Reiner; Dionyz Pogany (Microelectron. Reliab., 2018)

A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. - D. Wieland; S. Ofner; Manuel Stabentheiner; Boris Butej; Christian Koller; J. Sun; Andrea Minetto; Korbinian Reiser; Oliver Häberlen; Michael Nelhiebel; Michael Glavanovics; Dionyz Pogany; et al. (IRPS, 2023)

Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery. - Bernhard Ruch; Rajarshi Roy Chaudhuri; Boris Butej; Joao Gomes; Manuel Stabentheiner; Korbinian Reiser; Christian Koller; Dionyz Pogany; Clemens Ostermaier; Michael Waltl (IRPS, 2025)