Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. - Cristina Maurette-Blasini; Rainer Weber; Sandrine Wagner; Dirk Schwantuschke; Sébastien Chartier; Rüdiger Quay (BCICTS, 2023)

Outdoor Transmission Trials in the W-Band for 6G Mobile Access Scenarios. - Mehrnoosh Mazhar Sarmadi; Ramez Askar; Mathis Schmieder; Michael Peter; Dirk Schwantuschke; Wilhelm Keusgen (VTC2023-Spring, 2023)

Characterization and Large-Signal Modeling of 4-Pole Backgated InGaAs HEMT. - Antony Abel Kunnath; Sayed Ali Albahrani; Dirk Schwantuschke; Arnulf Leuther (BCICTS, 2024)

Exploring Breakdown Voltage Improvement in 20-nm InGaAs-Channel HEMT-OI with Metallic Back-Gate. - Antony Abel Kunnath; Maxime Moulin; Sayed Ali Albahrani; Dirk Schwantuschke; Arnulf Leuther (BCICTS, 2024)

ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies. - Cristina Maurette-Blasini; Dirk Schwantuschke; Sayed Ali Albahrani; Peter Brückner; Konstantin Kuliabin; Sébastien Chartier; Rüdiger Quay (BCICTS, 2024)

Large-Signal Modeling of a 50 nm mHEMT Incorporating a Physical Impact-Ionization Model. - Yasin Yüce; Sayed Ali Albahrani; Dirk Schwantuschke; Maxime Moulin; Arnulf Leuther (BCICTS, 2024)

W-Band Beamforming Front-End Implementation and Outdoor Trials for Mobile Backhaul and Access. - Mathis Schmieder; Ramez Askar; Alper Schultze; Mehrnoosh Mazhar Sarmadi; Michael Peter; Dirk Schwantuschke; Wilhelm Keusgen (ICC, 2024)