Enhanced memory window and reliability of α-IGZO FeFET enabled by atomic-layer-deposited HfO2 interfacial layer. - Yinchi Liu; Xun Lu; Shiyu Li; Hao Zhang; Jining Yang; Yeye Guo; Dmitriy Anatolyevich Golosov; Chenjie Gu; Hongliang Lu; Zhigang Ji; Shijin Ding; Wenjun Liu (Sci. China Inf. Sci., 2025)