STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. - Doyoung Jang; Marie Garcia Bardon; Dmitry Yakimets; Kenichi Miyaguchi; An De Keersgieter; Thomas Chiarella; Romain Ritzenthaler; Morin Dehan; Abdelkarim Mercha (ESSDERC, 2013)

Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies. - Trong Huynh Bao; Dmitry Yakimets; Julien Ryckaert; Ivan Ciofi; Rogier Baert; Anabela Veloso; Jürgen Bömmels; Nadine Collaert; Philippe Roussel; S. Demuynck; Praveen Raghavan; Abdelkarim Mercha; et al. (ESSDERC, 2014)

Holisitic device exploration for 7nm node. - Praveen Raghavan; Marie Garcia Bardon; Doyoung Jang; P. Schuddinck; Dmitry Yakimets; Julien Ryckaert; Abdelkarim Mercha; Naoto Horiguchi; Nadine Collaert; Anda Mocuta; Dan Mocuta; Zsolt Tokei; et al. (CICC, 2015)

Design technology co-optimization for enabling 5nm gate-all-around nanowire 6T SRAM. - Trong Huynh Bao; Sushil Sakhare; Julien Ryckaert; Dmitry Yakimets; Abdelkarim Mercha; Diederik Verkest; Aaron Voon-Yew Thean; Piet Wambacq (ICICDT, 2015)

Dimensioning for power and performance under 10nm: The limits of FinFETs scaling. - Marie Garcia Bardon; P. Schuddinck; Praveen Raghavan; Doyoung Jang; Dmitry Yakimets; Abdelkarim Mercha; Diederik Verkest; Aaron Thean (ICICDT, 2015)

Lateral NWFET optimization for beyond 7nm nodes. - Dmitry Yakimets; Doyoung Jang; Praveen Raghavan; Geert Eneman; Hans Mertens; P. Schuddinck; Arindam Mallik; Marie Garcia Bardon; Nadine Collaert; Abdelkarim Mercha; Diederik Verkest; Aaron Thean; et al. (ICICDT, 2015)

Device/system performance modeling of stacked lateral NWFET logic. - Victor Huang; Chenyun Pan; Dmitry Yakimets; Praveen Raghavan; Azad Naeemi (ISQED, 2016)

Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7. - Mohit Kumar Gupta 001; Pieter Weckx; Stefan Cosemans; Pieter Schuddinck; Rogier Baert; Dmitry Yakimets; Doyoung Jang; Yasser Sherazi; Praveen Raghavan; Alessio Spessot; Anda Mocuta; Wim Dehaene (ESSDERC, 2017)