Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications. - Clément Fleury; Rimma Zhytnytska; Sergey Bychikhin; Mattia Capriotti; Oliver Hilt; Domenica Visalli; Gaudenzio Meneghesso; Enrico Zanoni; Joachim Würfl; Joff Derluyn; Gottfried Strasser; Dionyz Pogany (Microelectron. Reliab., 2013)