Improved modeling of isolated EDMOS in advanced CMOS technologies. - Antoine Litty; Sylvie Ortolland; Sorin Cristoloveanu; Helene Beckrich Ros; Dominique Golanski (ICICDT, 2013)

Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applications. - Antoine Litty; Sylvie Ortolland; Dominique Golanski; Sorin Cristoloveanu (ESSDERC, 2014)

EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift region. - Antoine Litty; Sylvie Ortolland; Dominique Golanski; Christian Dutto; Sorin Cristoloveanu (ESSDERC, 2015)

Integration of SPAD in 28nm FDSOI CMOS technology. - Tulio Chaves de Albuquerque; Françis Calmon; Raphael Clerc; Patrick Pittet; Younes Benhammou; Dominique Golanski; Sebastien Jouan; Denis Rideau; Andreia Cathelin (ESSDERC, 2018)

Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices. - Rémi Helleboid; Denis Rideau; Isobel Nicholson; Norbert Moussy; Olivier Saxod; Marie Basset; Jérémy Grebot; Antonin Zimmerman; Bastien Mamdy; Dominique Golanski; Megan Agnew; Sara Pellegrini; et al. (ESSDERC, 2021)

Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. - Mathieu Sicre; Megan Agnew; Christel Buj; Jean Coignus; Dominique Golanski; Rémi Helleboid; Bastien Mamdy; Isobel Nicholson; Sara Pellegrini; Denis Rideau; David Roy 001; Françis Calmon (ESSDERC, 2021)

Statistical measurements and Monte-Carlo simulations of DCR in SPADs. - Mathieu Sicre; Megan Agnew; Christel Buj; Caroline Coutier; Dominique Golanski; Rémi Helleboid; Bastien Mamdy; Isobel Nicholson; Sara Pellegrini; Denis Rideau; David Roy 001; Françis Calmon (ESSCIRC, 2022)

A self-sustaining Single Photon Avalanche Diode Model. - Sven Rink; V. Quenette; Jean-Robert Manouvrier; Andre Juge; Gilles Gouget; Denis Rideau; R. A. Bianchi; Dominique Golanski; Bastien Mamdy; Jean-Baptiste Kammerer; Wilfried Uhring; Christophe Lallement; et al. (ESSDERC, 2022)

Direct Measurements and Modeling of Avalanche Dynamics and Quenching in SPADs. - Denis Rideau; Wilfried Uhring; R. A. Bianchi; Rémi Helleboid; Gabriel Mugny; Jérémy Grebot; Jean-Robert Manouvrier; R. Neri; F. Brun; Mohammadreza Dolatpoor Lakeh; Sven Rink; Jean-Baptiste Kammerer; et al. (ESSDERC, 2023)

Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETs. - Abygaël Viey; William Vandendaele; P. Kouaté Wafo; Xavier Garros; Luigi Basset; F. Ponthenier; Joris Lacord; R. Fillon; X. Federspiel; D. Roy; S. Joblot; Dominique Golanski (IRPS, 2025)