SiC lateral Schottky diode technology for integrated smart power converter. - Jean-François Mogniotte; Christophe Raynaud; Mihai Lazar; Bruno Allard; Dominique Planson (ICIT, 2018)

VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. - Besar Asllani; Asad Fayyaz; Alberto Castellazzi; Hervé Morel; Dominique Planson (Microelectron. Reliab., 2018)

VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. - Besar Asllani; Alberto Castellazzi; Oriol Avino-Salvado; Asad Fayyaz; Hervé Morel; Dominique Planson (IRPS, 2019)

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. - P. Vigneshwara Raja; Christophe Raynaud; Camille Sonneville; Atse Julien Eric N'Dohi; Hervé Morel; Luong-Viêt Phung; Thi Huong Ngo; Philippe De Mierry; Éric Frayssinet; Hassan Maher; Josiane Tasselli; Karine Isoird; et al. (Microelectron. J., 2022)

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration. - Ralph Makhoul; Abdelhakim Bourennane; Luong-Viêt Phung; Frédéric Richardeau; Mihai Lazar; Nour Beydoun; Sergueï Kostcheev; Philippe Godignon; Dominique Planson; Hervé Morel; David Bourrier (MIXDES, 2023)