Effects of the Oxygen Content of a-IGZO Field-Effect Transistors on Their Density of States and Dopant Concentration Lateral Profile Regarding Oxygen Scavenging. - Seong Hoon Jeon; Wonjung Kim; Seungki Kim; Seung Joo Myoung; Dong Hyeop Shin; Dong Myong Kim; Sung-Jin Choi; Yoon Jung Lee; Changwook Kim; Dae Hwan Kim (IEEE Access, 2026)