Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. - Milan Pesic; Bastien Beltrando; Tommaso Rollo; Cristian Zambelli; Andrea Padovani; Rino Micheloni; Rita Maji; Lisa Enman; Mark Saly; Yang Ho Bae; Jung-Bae Kim; Dong Kil Yim; et al. (IRPS, 2023)

Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors. - Bastien Beltrando; Bruno Coppolelli; Jung-Bae Kim; Yang Ho Bae; Stephen Weeks; Lisa Enman; Ghazal Saheli; Davide Cornigli; Stuart Brinkley; Mark Saly; Luca Larcher; Dong Kil Yim; et al. (IRPS, 2024)