First Stacked Nanosheet FeFET Featuring Memory Window of 1.8V at Record Low Write Voltage of 2V and Endurance >1E11 Cycles. - Yu-Rui Chen; Yi-Chun Liu; Zefu Zhao; Wan-Hsuan Hsieh; Jia-Yang Lee; Chien-Te Tu; Bo-Wei Huang; Jer-Fu Wang; Shee-Jier Chueh; Yifan Xing; Guan-Hua Chen; Hung-Chun Chou; et al. (VLSI Technology and Circuits, 2023)