A 3nm GAAFET Analog Assisted Digital LDO with High Current Density for Dynamic Voltage Scaling Mobile Applications. - Seki Kim; Hyongmin Lee; Yongjin Lee; Dongha Lee 004; Byeongbae Lee; Jahoon Jin; Susie Kim; Miri Noh; Kwonwoo Kang; Sangho Kim; Takahiro Nomiyama; Ji-Seon Paek; et al. (VLSI Technology and Circuits, 2022)

14.6 A 10A Computational Digital LDO Achieving 263A/mm2 Current Density with Distributed Power-Gating Switches and Time-Based Fast-Transient Controller for Mobile SoC Application in 3nm GAAFET. - Dongha Lee 004; Seki Kim; Takahiro Nomiyama; Dong-Hoon Jung; Dongsu Kim; Jongwoo Lee; Sungung Kwak (ISSCC, 2024)

8.4 A 4GHz, 0.69%-Accuracy Voltage-Droop Detector with Multiple Remote Sensing and Under 2-Cycle Detection Latency in 2nm GAAFET. - Dong-Hoon Jung; Dongha Lee 004; Seki Kim; Susie Kim; Min Young Kang; Takahiro Nomiyama; Dongsu Kim; Jongwoo Lee (ISSCC, 2025)