5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. - Jaekyu Lee; Seung Sik Kim; In-Gyu Baek; Heesung Shim; Taehoon Kim; Taehyoung Kim; Jungchan Kyoung; Dongmo Im; Jinyong Choi; KeunYeong Cho; Daehoon Kim; Haemin Lim; et al. (ISSCC, 2020)

7.9 1/2.74-inch 32Mpixel-Prototype CMOS Image Sensor with 0.64μ m Unit Pixels Separated by Full-Depth Deep-Trench Isolation. - Jongeun Park; Sungbong Park; Kwansik Cho; Taehun Lee; Changkyu Lee; Donghyun Kim; Beomsuk Lee; SungIn Kim; Ho-Chul Ji; Dongmo Im; Haeyong Park; Jinyoung Kim; et al. (ISSCC, 2021)

6.10 A 1/1.56-inch 50Mpixel CMOS Image Sensor with 0.5μm pitch Quad Photodiode Separated by Front Deep Trench Isolation. - DongHyun Kim; Kwansik Cho; Ho-Chul Ji; Minkyung Kim 010; Junghye Kim; Taehoon Kim; Seungju Seo; Dongmo Im; You-Na Lee 001; Jinyong Choi; Sunghyun Yoon; Inho Noh; et al. (ISSCC, 2024)