Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. - Dongwoo Kim 005; Seonhaeng Lee; Cheolgyu Kim; Chiho Lee; Jeongsoo Park 005; Bongkoo Kang (Microelectron. Reliab., 2012)

Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. - Seonhaeng Lee; Dongwoo Kim 005; Cheolgyu Kim; N.-H. Lee; Gang-Jun Kim; Chiho Lee; Jeongsoo Park 005; Bongkoo Kang (Microelectron. Reliab., 2012)

Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. - Seonhaeng Lee; Dongwoo Kim 005; Cheolgyu Kim; Chiho Lee; Jeongsoo Park 005; Bongkoo Kang (Microelectron. Reliab., 2012)

Fast and accurate method of lifetime estimation for HfSiON/SiO2 dielectric n-MOSFETs under positive bias temperature instability. - Giyoun Roh; Hyeokjin Kim; Cheolgyu Kim; Dongwoo Kim 005; Bongkoo Kang (Microelectron. Reliab., 2017)