A 512GB 1.1V Managed DRAM Solution with 16GB ODP and Media Controller. - Seong Ju Lee; Byung Deuk Jeon; Kyeong Pil Kang; Dong Yoon Ka; Na Yeon Kim; Yongseop Kim; Yunseok Hong; Mankeun Kang; Jinyong Min; Mingyu Lee; Chunseok Jeong; Kwandong Kim; et al. (ISSCC, 2019)

A 370-fJ/b, 0.0056 mm2/DQ, 4.8-Gb/s DQ Receiver for HBM3 with a Baud-Rate Self-Tracking Loop. - Han-Gon Ko; Soyeong Shin; Chan-Ho Kye; Sang-Yoon Lee 006; Jaekwang Yun; Hae-Kang Jung; Doobock Lee; Suhwan Kim 001; Deog-Kyoon Jeong (VLSI Circuits, 2019)

22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST. - Dong-Uk Lee; Ho Sung Cho; Jihwan Kim; Young Jun Ku; Sangmuk Oh; Chul Dae Kim; Hyun Woo Kim; Wooyoung Lee; Tae-Kyun Kim 001; Tae Sik Yun; Min Jeong Kim; SeungGyeon Lim; et al. (ISSCC, 2020)

A 0.45 pJ/b, 6.4 Gb/s Forwarded-Clock Receiver With DLL-Based Self-Tracking Loop for Unmatched Memory Interfaces. - Soyeong Shin; Han-Gon Ko; Chan-Ho Kye; Sang-Yoon Lee 006; Jaekwang Yun; Doobock Lee; Hae-Kang Jung; Suhwan Kim 001; Deog-Kyoon Jeong (IEEE Trans. Circuits Syst. II Express Briefs, 2020)