A 1280×960 Dynamic Vision Sensor with a 4.95-μm Pixel Pitch and Motion Artifact Minimization. - Yunjae Suh; Seungnam Choi; Masamichi Ito; Jeongseok Kim; Youngho Lee; Jongseok Seo; Heejae Jung; Dong-Hee Yeo; Seol Namgung; Jongwoo Bong; Sehoon Yoo; Seung-Hun Shin; et al. (ISCAS, 2020)

5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology. - Hyunchul Kim; Jongeun Park; Insung Joe; Doowon Kwon; Joo Hyoung Kim; Dongsuk Cho; Taehun Lee; Changkyu Lee; Haeyong Park; Soojin Hong; Chongkwang Chang; Jingyun Kim; et al. (ISSCC, 2020)

5.5 A 2.1e- Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology. - Jaekyu Lee; Seung Sik Kim; In-Gyu Baek; Heesung Shim; Taehoon Kim; Taehyoung Kim; Jungchan Kyoung; Dongmo Im; Jinyong Choi; KeunYeong Cho; Daehoon Kim; Haemin Lim; et al. (ISSCC, 2020)

A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory. - Min-Woong Seo; Myunglae Chu; Hyun-Yong Jung; Suksan Kim; Jiyoun Song; Junan Lee; Sung-Yong Kim; Jongyeon Lee; Sung-Jae Byun; Daehee Bae; Minkyung Kim 010; Gwi-Deok Lee; et al. (VLSI Circuits, 2021)

2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory. - Min-Woong Seo; Myunglae Chu; Hyun-Yong Jung; Suksan Kim; Jiyoun Song; Daehee Bae; Sanggwon Lee; Junan Lee; Sung-Yong Kim; Jongyeon Lee; Minkyung Kim 010; Gwi-Deok Lee; et al. (IEEE J. Solid State Circuits, 2022)