8Gb 3D DDR3 DRAM using through-silicon-via technology. - Uksong Kang; Hoeju Chung; Seongmoo Heo; Soon-Hong Ahn; Hoon Lee; Sooho Cha; Jaesung Ahn; Dukmin Kwon; Jin Ho Kim; Jae-Wook Lee 007; Han-Sung Joo; Woo-Seop Kim; et al. (ISSCC, 2009)

8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology. - Uksong Kang; Hoeju Chung; Seongmoo Heo; Dukha Park; Hoon Lee; Jin Ho Kim; Soon-Hong Ahn; Sooho Cha; Jaesung Ahn; Dukmin Kwon; Jae-Wook Lee 007; Han-Sung Joo; et al. (IEEE J. Solid State Circuits, 2010)

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW. - Hoeju Chung; Byung-Hoon Jeong; ByungJun Min; Youngdon Choi; Beak-Hyung Cho; Junho Shin; Jinyoung Kim; Jung Sunwoo; Joon-min Park; Qi Wang; Yong-jun Lee; Sooho Cha; et al. (ISSCC, 2011)

A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth. - Youngdon Choi; Ickhyun Song; Mu-Hui Park; Hoeju Chung; Sanghoan Chang; Beakhyoung Cho; Jinyoung Kim; Younghoon Oh; Dukmin Kwon; Jung Sunwoo; Junho Shin; Yoohwan Rho; et al. (ISSCC, 2012)